Features
![Power_electronics Features](images/features/small/456.jpg)
Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
More details...
AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
Power Electronics Europe News
Gate driver IC is drop-in replacement for EV charging stations
![](http://79.170.40.53/power-mag.com/userfiles/image/PEE_Nov-2016/Infineon_04-11-2016.png)
The low-Ohmic output stages increase efficiency by over 30%, compared to conventional single-channel gate driver ICs, says the company.
The outputs feature what the company claims is an industry-leading reverse current robustness of 5A. This eliminates the need for protection diodes when driving MOSFETs with large parasitic source inductances typically found in TO-220 or TO-247 packages. This can save both bill of material and PCB area, say the company.
The portfolio has a -10V input robustness for a safety margin against ground-shifts when driving gate-transformers. This protects against electrical over-stress of the inputs or latch-up of the driver IC. Variants of the 1EDN EiceDriver includes devices with separate source and sink output terminals for turn-on and turn-off speed optimization, concurrently saving one external diode.
View PDF
| Home / News / Features / Events / Media Data / Issue Archive / Magazine Subscription / Contact Us
| Privacy Policy | Site Map | © Copyright DFA Media
| Web design by Immersive Media
| Privacy Policy | Site Map | © Copyright DFA Media
| Web design by Immersive Media