The system in package (SiP) contains a 600V/8.0A, single-phase MOSFET in a 13 x 11mm outline, saving bill of materials costs and board space, says the company, in industrial motor drives, lamp ballasts, power supplies, converters, and inverters.

By integrating four power MOSFETs, it is an efficient alternative to other modules currently on the market that are typically dual-FET half-bridge or six-FET three-phase devices. Unlike these choices, only one SiP is needed to implement a single-phase full bridge, leaving no internal MOSFETs unused. There is also flexibility to configure the module as one full bridge or two half bridges.

The device uses the company’s high-voltage BCD6s-offline fabrication process and integrates gate drivers for the power MOSFETs and the bootstrap diodes needed for high-side driving, eliminating external components. The gate drivers are optimised for reliable switching and low EMI. The SiP also features cross-conduction protection and under-voltage lockout.

There is also a wide supply-voltage range, extending down to 6.5V and the SiP can accept logic signals from 3.3 to 15V for interfacing with microcontrollers, DSPs or Hall sensors.

The SiP is available now, in a thermally efficient multi-island VFQFPN package.