MHz switching frequency-based devices enable miniaturization of the DC-DC converter and EMI filters
Achieving EMI conducted emission compliance for automobiles with a single stage filter. By Nicola Rosano, Sr. Strategic FA/System Engineer at Vicor
More details...
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
It can be used in multi-level converters, EV charging, solar power inverters, and motor drives.
The 350V GaN transistor has a maximum RDS(on) of 65mΩ and a 26A pulsed output current. It can be also be used in three-level, 400V input to 48V output LLC converters for telecomms or server power supplies, advises the company.
The transistor is just 1.95 x 1.95mm (3.72mm2) enabling the efficient half bridge with gate driver to occupy five times less area than a comparable silicon solution, claims the company. Despite its small size, the transistor is claimed to handle thermal conditions more efficiently than plastic packaged MOSFETs.
The EPC9084 development board is also available. It is a 350V maximum device voltage, half bridge featuring the EPC2050, and Silicon Labs’ Si8274GB1-IM gate driver. The board measures 51 x 38mm and contains all critical components for evaluation of the 350V eGaN FET.
The EPC2050 eGaN FET and the EPC9084 development board are available for immediate delivery from Digi-Key.
View PDF
| Privacy Policy | Site Map | © Copyright DFA Media
| Web design by Immersive Media