Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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The AONX38168 is the newest generation of XSPairFETs, offering the lowest on-state resistance and best Figure of Merits (Rdson x Qg), suitable for server and telecommunications applications. It allows new designs to operate at higher switching frequencies, says the company.
The device includes a low-side and high-side MOSFET in a leadless surface mount package, with a 5.0 x 6.0mm outline.
The AONX38168 uses 25V n-channel MOSFET technology. The XSPairFET includes the low-side and high-side MOSFET in a leadless surface mount package, for synchronous DC/DC converter applications.
The MOSFET is designed with the latest bottom source packaging technology which has a lower switch node ringing due to lower parasitic inductance. It offers a higher power density comparative to existing solutions, and is well suited for server and telecommunication markets. The XSPairFET has bottom source connection for the low-side MOSFET which can result in improved thermal performance, simplified layout, and reduced EMI, claims the company.
The AONX38168 is immediately available in production quantities with a lead-time of 12 to 14 weeks.
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