Features
Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
Mouser to stock Macom�s 10W GaN-on-Si power amp module
The module can be used for a selection of radio and communications applications, including military tactical communications and electronic countermeasures, wireless public safety communications, and land mobile radio systems.
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The matched 10W power amplifier module is based on gallium nitride-on-silicon (GaN-on-Si) technology. It operates in the 225 to 2600MHz frequency range and offers up to 40% power added efficiency (PAE) and 22dB power gain.
The module supports up to 36V operation (28V typical) and is robust, operating over the -40 to 85°C temperature range. The module has top and bottom mounting configurability and is supplied in a 14 x 18mm package. The module supports radio designs with strict size, weight, and power (SWaP) specifications and has an integrated gold-plated copper heatsink and a laminated air cavity package, which eliminates the need for PCB space and componentry associated with unmatched PA modules.
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