The UF3C065030T3S offers RDS(on) of 30mΩ and the UF3C065080T3S provides 80mΩ. The three-leaded, industry-standard TO220-3L package uses a sintered-silver packaging technology, developed by UnitedSiC, to improve thermal characteristics.

Both are based on the company’s cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. Standard gate-drive characteristics allow them to be specified as a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices on existing designs to lower conduction and switching losses, enhance thermal properties and integrate gate ESD protection.

In new designs, the FETs deliver increased switching frequencies, claims the company, to gain substantial system benefits in both efficiency and reduction in size, and cost of passive components, such as magnetics and capacitors. The FAST series devices offer low gate charge but also the best reverse recovery characteristics of any device of similar ratings, according to the company. The devices can be used for switching inductive loads when used with recommended RC-snubbers and any application requiring standard gate drive.

These latest FETs can be used in EV charging, PV inverters, switch mode power supplies, power factor correction modules, motor drives and induction heating.

The UF3C FAST SiC series comprises 14 devices, in TO247-3L, TO247-4L, TO220-3L and D2PAK7-3L packages, with four 1,200V and 10 650V options.