Announcing the launch of the Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) OptiMOS™ 6 200 V MOSFET product family, the company claims the new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts. With improved conduction losses and switching behaviour for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This perportedly benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others. Additionally, the combination of a wide safe operating area (SOA) and industry-leading R _DS(on) results in a perfect fit for static switching applications such as battery management systems. introduction of the new OptiMOS 6 200 V product family. 

The OptiMOS 6 200 V portfolio delivers enhanced technical features compared to its predecessor, the OptiMOS 3. It is claimed it features a 42 percent lower R _DS(on) that contributes to reduced conduction losses and increased output power. Regarding diode behavior, the OptiMOS 6 200 V provides a significant increase in softness, more than three times that of the OptiMOS 3. Combined with potentially up to 89 percent reduction in Q _rr(typ), the switching and EMI behaviors are significantly improved. The technology also features improvements in parasitic capacitance linearity (C _oss and C _rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V _GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.

for more information visit www.infineon.com