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Power Electronics Europe News
Monolithic GaN half bridge increases efficiency for buck converters

TThe EPC2105 can increase efficiency and power density for buck converter systems at nearly 98% at 10A when switching at 300kHz and converting from 48 to 12V, and 84% at 14A when switching at 300kHz and converting from 48 to 1V.
The 80V GaN transistor half-bridge integrates two eGaN power FETs into a single device, so that interconnect inductances and the interstitial space are eliminated on the PCB. According to the company, this increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. It can be used for high frequency DC/DC conversion and enables efficient single stage conversion from 48 directly to 1V system loads.

Each device within the half-bridge component has a voltage rating of 80V. The upper FET has a typical RDS(on) of 10mΩ, and the lower FET has a typical RDS(on) of 2.3mΩ. The high-side FET is approximately 25% the size of the low-side device.

It is supplied in a CSP (chip-scale package) and measures just 6.05 x 2.3mm.

SA d
evelopment board, the EPC9041, contains an EPC2105 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. There are various probe points to facilitate simple waveform measurement and efficiency calculation.



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