The company has evolved its Nano Pulse Control, high speed pulse control technology to improve control pulse width from nine nanoseconds to what it claims is an industry best of two nanoseconds. This technology has been developed to meet the high speed switching characteristics of GaN devices.

Many design engineers are investigating miniaturisation of the power supply circuit which requires a reduction in size of the peripheral components through high speed switching. Achieving this requires a control IC that can take advantage of the drive performance of high speed switching devices.

The company introduced high speed control IC technology for GaN devices using proprietary analogue power supply technology Nano Pulse Control. It plans to ship samples of 100V one-channel DC/DC control ICs in the second half of 2023. Using these ICs in conjunction with Rohm’s EcoGaN devices is expected to result in significant energy savings and miniaturisation opening up design opportunities in a wide range of applications, including base stations, data centres, factory automation equipment and drones.

Nano Pulse Control in the ICs combines analogue circuit design, processes and layout to reduce the minimum control pulse width of the control IC. The circuit configuration allows the IC to step down from 60V to 0.6V with a single power supply IC in 24V and 48V applications. Support for smaller drive peripheral components for high frequency switching of GaN devices decreases mounting area by approximately 86% over conventional solutions when paired with an EcoGaN power supply circuit, reports the company and using a single IC instead of the conventional two power supply ICs.

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