The next-generation of integrated MasterGaN bridge devices are claimed to simplify power supply design. The MasterGaN family combines 650V GaN high electron-mobility transistors (HEMT) with optimised gate drivers, system protection and an integrated bootstrap diode that helps power the device at start up. This level of integration means designers do not have to tackle the complex gate drive requirements of GaN transistors, says the company.

The integra200W and 500W devices contain two GaN HEMTs connected in a half-bridge configuration. The arrangement is suitable for building switched-mode power supplies, adapters and chargers with active clamp flyback, active clamp forward and resonant converter topologies. The MasterGaN1L and MasterGaN4L are pin- compatible with MasterGaN1 and MasterGaN4 respectively. They have a newly optimised turn-on delay that allows working at higher frequency and higher efficiency with low load, especially in resonant topologies, according to the company.  

The inputs accept signal voltages from 3.3V to 15V, with hysteresis and pull-down that facilitate connecting directly to a controlling device such as a microcontroller, DSP or Hall-effect sensors. A dedicated shutdown pin helps designers save system power and the two GaN HEMTs have accurately matched timing with an interlocking circuit to prevent cross-conduction conditions.   

The MasterGaN1L HEMTs have 150mΩ RDS(on) and 10A rated current, for use in applications up to 500W. Power consumption at no load power is 20mW and high conversion efficiency enables designers to meet stringent industry targets for standby power and average efficiency. The MasterGaN4L HEMTs target applications up to 200W, with 225mΩ RDS(on) and rated current of 6.5A. 

ST also supplies the EVLMG1LPBRDR1 and EVLMG4LPWRBR1 demonstration boards containing a GaN-based half-bridge power module fine-tuned to work in an LLC application to help designers create new topologies leveraging the new devices without needing a complete PCB design. 

The MasterGaN1L and MasterGaN4L are in production now in 9.0 x 9.0 x 1.0mm GQFN packages.