The 40 to 300V rad-hard GaN transistors are for critical applications in hi-rel or commercial satellite space environments. They range from 4.0 to 30A and are smaller, offer lower resistance and have superior switching performance, in comparison to silicon-based rad hard power MOSFETs, says the company.

They are therefore suitable for power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation and ion thrusters for satellite orientation and positioning. They can also be used as interplanetary propulsion of low-mass robotic vehicles.

Another benefit of the GaN devices, says the company, is superior radiation hardness under heavy ions (SEE) and gamma radiation (TID). Single event effect (SEE) immunity is guaranteed at the wafer level.

EPC Space provides high-reliability, rad-hard enhancement-mode gallium nitride (eGaN) power management devices for space and other harsh environments, manufactured in an AS9100D-certified facility in the greater Boston area, USA.