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Wafer-level MOSFETs save power and simplify thermal management

The PMCB60XN and PMCB60XNE are 30V N-channel small-signal trench MOSFETs in a DSN1006 package and the PMCA14UN is a 12V, N-channel trench MOSFET in a DSN1010 package.

The PMCB60XN and PMCB60XNE are claimed to have market-leading RDS(on) in compact wafer-level DSN1006 package and are designed to make energy go further where space is tight and battery runtime is critical.

Suitable applications are smartphones, smart watches, hearing aids, and earphones.

RDS(on) is up to 25% better than competing devices, claimed Nexperia. They minimise energy losses and increase efficiency in load switching and battery management. They also reduce self-heating which enhances user comfort in wearable devices, said the company.

The PMCB60XN and PMCB60XNE have maximum RDS(on) of 50mΩ and 55mΩ respectively, at VGS = 4.5V. This gives them the lowest on-resistance per die area among similar 30V MOSFETs in the market, according to the company. In addition, the PMCB60XNE is ESD protected to 2kV (human body model – HBM) integrated in the 1.0 x 0.6 x 0.2mm DSN1006 outline. Both MOSFETs are rated for drain current up to 4.0A.

The third introduction is the PMCA14UN, a 12V, N-channel trench MOSFET in a DSN1010 package. Max RDS(on) is 16mΩ at VGS = 4.5V in the 0.96 x 0.96 x 0.24mm (SOT8007) outline.

All three MOSFETs are in production now.

 

 

 



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