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Innovative power architectures using power modules provide power redundancy and improve overall safety and system performance By Patrick Kowalyk, Automotive FAE,Vicor
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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The FETs have been added to the company’s family of radiation-hardened GaN devices for power conversion. The two new 40V devices are rated at 62A and 250A. The EPC7001 is a 40V, 4mΩ, 250A pulsed, rad hard GaN FET in a small 7.0mm2 footprint. The EPC7002 is an even smaller 40V, 14.5mΩ, 62A pulsed, rad-hard GaN FET with a footprint of just 1.87mm2. Both devices have a total dose radiation rating greater than 1,000k Rad(Si) and SEE immunity for LET (linear energy transfer) of 83.7MeV/mg/cm2 with VDS (drain source voltage) up to 100% of rated breakdown.
The two GaN FETs, in keeping with the rest of EPC’s Rad Hard family, are offered in a chip-scale package and packaged versions are available from EPC Space.
EPC offers eGaN FETs and ICs as an alternative to conventional rad hard silicon devices for high reliability and space applications. They are “significantly smaller” and have 40 times better electrical performance and lower overall cost than rad hard silicon devices, says the company. They also exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon devices, says EPC.
The GaN FETs can be deployed in DC/DC power converters, motor drives, lidar, deep probes and ion thrusters for space applications and are suitable for both LEO (low earth orbit) and GEO (geosynchronous earth orbit) satellites and avionics systems.
Both the EPC7001 and EPC7002 are available for engineering sampling now.
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