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RF power transistors boost 5G coverage

RF power transistors for 32T32R active antenna systems use NXP’s proprietary GaN technology. The series of transistors complement the company’s existing portfolio of discrete GaN power amplifier solutions for 64T64R radios, covering all cellular frequency bands from 2.3 to 4.0GHz. NXP claims that it now offers the largest RF GaN portfolio for massive multiple input, multiple output (massive MIMO) 5G radios.

Network operators are using massive MIMO coverage to extend 5G deployments beyond dense urban areas. Combining 32 antennas instead of 64, means coverage can be maintained more cost effectively, while maintaining the high-end 5G experience enabled by massive MIMO, says NXP.

The transistors deliver twice the power in the same package as 64T64R devices, resulting in a smaller and lighter overall 5G connectivity. They are pin-compatible, to enable network operators to scale rapidly across frequency and power levels.

The GaN discrete devices are designed for 10W average power at the antenna, targeting 320W radio units, with up to 58% of drain efficiency. The integrated device includes driver and final-stage transistors.

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