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The pair says that the compact footprint of this new SiC rectifier module will help to maximise power density, reducing the amount of required board space and lowering the overall system cost. Thermal performance is optimised using a combination of top-side cooling (TSC) and an integrated negative temperature co-efficient (NTC) sensor which monitors the device temperature and provides real time feedback for device or system level prognosis and diagnosis. The rectifier module has a low inductance package to enable high frequency operation and has been qualified to operate with a junction temperature of up to 175°C.

According to Katrin Feurle, Senior Director of the Product Group SiC at Nexperia, the collaboration combines the company’s SiC semiconductors with module packaging for products which offer “exceptionally high levels of power density”. The module is the first step in what is envisaged as a long-term SiC partnership between Nexperia and Kyocera AVX.

Thomas Rinschede, Deputy Vice President Sensing and Control Division at Kyocera AVX Components Sensing and Control Division, comments: “We are delighted to further extend our successful partnership with Nexperia into the production of silicon carbide modules for power electronics applications . . . Nexperia’s manufacturing expertise combined with Kyocera module know-how make a compelling offering for customers looking to achieve higher power densities using wide bandgap semiconductor technology.”

Nexperia expects samples of the new SiC rectifier modules to be available in Q1 2024.