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Power Electronics Europe News
200V GaN transistors is x12 smaller than equivalent MOSFETs

The FET is around 12 times smaller than equivalently rated silicon MOSFETs and can be used for wireless power, multi-level AC/DC power supplies, robotics, and solar micro inverters.

The 200V transistor has maximum RDS(on) of 25mΩ with a 55A pulsed output current. The chip-scale packaging handles thermal conditions better than the plastic packaged MOSFETs, says the company, as the heat is dissipated directly to the environment, whereas the heat from the MOSFET die is held within a plastic package. The package measures 0.95 x 2.76mm (2.62mm2). 

The transistor is manufactured using the company's fifth-generation process. A development board, the EPC9079, is a 200V maximum device voltage, half bridge with onboard gate driver. The 2.0 x 1.5inch (50 x 37mm) board features the EPC2046, onboard gate drive supply and bypass capacitors and contains all critical components to evaluate the company's latest eGaN FET.

Both board and FET are available for immediate delivery from distributor, Digi-Key.

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