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GaN power ICs combine FETs and logic to surpass silicon
The GaN Power ICs use the company’ proprietary AllGaN, monolithically-integrated 650V technology. Combining GaN power FETs with GaN logic and drive circuits enables 10 to 100 times higher switching frequency than existing silicon circuits, claims the company. This makes power electronics smaller, lighter and lower in cost.

The high frequency, energy-efficient converters will enable a new generation of smartphone and laptop chargers, OLED TVs, LED lighting, solar inverters, wireless charging devices and data centres.

GaN could displace silicon in the power electronics market, by virtue of its inherent high-speed, high-efficiency capabilities as a power FET, maintains the company. Previously, that potential was limited by the lack of equally high performance circuits to drive the GaN FETs quickly and cost effectively. The company believes it has solved this challenge by monolithically integrating GaN drive and logic circuits with GaN power FETs. It believes that high-frequency GaN power ICs will enable low-frequency, silicon-based power systems.




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